vishay TLCW5100 document number 83222 rev. a2, 17-jun-03 vishay semiconductors www.vishay.com 1 94 8631 ultrabright white led, ? 5 mm untinted non-diffused description the TLCW5100 series is a clear, non diffused 5 mm led for high end applications where supreme lumi- nous intensity required. these lamps with clear untinted plastic case utilize the highly developed ultrabright ingan technologies. the lens and the viewing angle is optimized to achieve best performance of light output and visibility. features ? untinted non diffused lens utilizing ultrabright ingan technology high luminous intensity luminous intensity and color categorized for each packing unit esd-withstand voltage: 1 kv for ingan applications interior and exterior lighting outdoor led panels instrumentation and front panel indicators replaces incandescent lamps light guide design parts table absolute maximum ratings t amb = 25 c, unless otherwise specified TLCW5100 part color, luminous intensity angle of half intensity ( ? ) technology TLCW5100 white, i v = 4000 mcd (typ.) 9 ingan / yag on sic parameter test condition symbol value unit reverse voltage v r 5 v dc forward current t amb 60 c i f 30 ma surge forward current t p 10 s i fsm 0.1 a power dissipation t amb 60 c p v 135 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c soldering temperature t 5 s t sd 260 c thermal resistance junction/ ambient r thja 300 k/w
www.vishay.com 2 document number 83222 rev. a2, 17-jun-03 vishay TLCW5100 vishay semiconductors optical and electrical characteristics t amb = 25 c, unless otherwise specified white TLCW5100 chromaticity coordi nate classification tolerance 0.005 parameter test condition symbol min ty p. max unit luminous intensity i f = 30 ma i v 1000 4000 mcd chromaticity coordinate x acc. to cie 1931 i f = 30 ma x 0.33 chromaticity coordinate y acc. to cie 1931 i f = 30 ma y 0.33 angle of half intensity i f = 30 ma ? 9 deg forward voltage i f = 30 ma v f 3.9 4.5 v reverse voltage i r = 10 a v r 5 v temperature coefficient of v f i f = 30 ma tc vf - 4 mv/k temperature coefficient of i v i f = 30 ma tc iv - 0.5 % / k group x y min max min max 3a 0.2900 0.3025 y = 1.4x - 0.121 y = 1.4x - 0.071 3b 0.3025 0.3150 y = 1.4x - 0.121 y = 1.4x - 0.071 3c 0.2900 0.3025 y = 1.4x - 0.171 y = 1.4x - 0.121 3d 0.3025 0.3150 y = 1.4x - 0.171 y = 1.4x - 0.121 4a 0.3150 0.3275 y = 1.4x - 0.121 y = 1.4x - 0.071 4b 0.3275 0.3400 y = 1.4x - 0.121 y = 1.4x - 0.071 4c 0.3150 0.3275 y = 1.4x - 0.171 y = 1.4x - 0.121 4d 0.3275 0.3400 y = 1.4x - 0.171 y = 1.4x - 0.121 5a 0.3400 0.3525 y = 1.4x - 0.121 y = 1.4x - 0.071 5b 0.3525 0.3650 y = 1.4x - 0.121 y = 1.4x - 0.071 5c 0.3400 0.3525 y = 1.4x - 0.171 y = 1.4x - 0.121 5d 0.3525 0.3650 y = 1.4x - 0.171 y = 1.4x - 0.121
vishay TLCW5100 document number 83222 rev. a2, 17-jun-03 vishay semiconductors www.vishay.com 3 typical characteristics (t amb = 25 c unless otherwise specified) figure 1. power dissipation vs. ambient temperature figure 2. forward current vs. ambient temperature figure 3. relative luminous flux vs. forward current 0 20 40 60 80 100 120 140 0 102030405060708090100 t amb ? ambient temperature ( q c ) 18152 p ?power dissipation (mw) v 0 5 10 15 20 25 30 35 40 0 102030405060708090100 t amb ? ambient temperature ( c) 18153 i - forward current ( ma ) f 0.01 0.10 1.00 10.00 1 10 100 16064 i - relative luminous flux v rel white i f - forward current ( ma ) figure 4. forward current vs. forward voltage figure 5. relative intensity vs. wavelength figure 6. relative luminous intensity vs. amb. temperature 1 10 100 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v f - forward voltag e(v) 16195 f i - forward current ( ma ) 0 10 20 30 40 50 60 70 80 90 100 400 450 500 550 600 650 700 750 800 - wavelength ( nm ) 16196 i - relative luminous intensity v rel q c ) 18155 i ?relative luminous intensity vrel
www.vishay.com 4 document number 83222 rev. a2, 17-jun-03 vishay TLCW5100 vishay semiconductors figure 7. change of forward voltage vs. ambient temperature figure 8. chromaticity coordinate shift vs. forward current figure 9. coordinates of colorgroups ?300 ?200 ?100 0 100 200 300 400 500 600 ?50 ?25 0 25 50 75 100 t amb ? ambient temperature ( q c ) 18154 v ? change of forward voltage (mv) f 10 ma 20 ma 30 ma 0.315 0.320 0.325 0.330 0.335 0.340 0.345 16198 f - chromaticity coordinate shift (x,y) x y i f - forward current ( ma ) white 060 50 40 30 20 10 0.22 0.24 0.26 0.28 0.30 0.32 0.34 0.36 0.38 0.40 0.42 0.44 0.28 0.29 0.30 0.31 0.32 0.33 0.34 0.35 0.36 0.37 18162 x coordinates 3a y and y? coordinates 3b 4a 4b 5a 5b 3c 3d 4c 4d 5c 5d figure 10. relative radiant sens itivity vs. angular displacement 0.4 0.2 0 0.2 0.4 s - relative sensitivity rel 0.6 94 8351 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0
vishay TLCW5100 document number 83222 rev. a2, 17-jun-03 vishay semiconductors www.vishay.com 5 package dimensions in mm 96 12121
www.vishay.com 6 document number 83222 rev. a2, 17-jun-03 vishay TLCW5100 vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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